Fluorine ion implantation system with non-tungsten materials and methods of using
AssigneeEntegris, Inc.
InventorsYing Tang, Sharad N. Yedave, Joseph R. Despres, Joseph D. Sweeney
Life of this patent
Estimating the term…
Abstract
A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.
Claims19
A system for implanting fluorine ion species into a substrate, the system comprising:
- a gas source comprising a fluorine compound, wherein the fluorine compound is capable of generating at least one fluorine ion species when ionized;
- and
- an arc chamber comprising arc chamber piece(s) with one or more materials, wherein the one or more materials comprises a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic, and wherein the arc chamber piece(s) are surface graded with the one or more materials, whereby surface grading is achieved by applying at least one of the one or more materials to the arc chamber piece(s) and then integrating the one or more materials into the arc chamber piece(s).
A system for implanting fluorine ion species into a substrate, the system comprising:
- a gas source comprising a fluorine compound, wherein the fluorine compound is capable of generating at least one fluorine ion species when ionized;
- and
- an arc chamber comprising interior surfaces,
- wherein all or a portion of the interior surfaces comprises removable arc chamber liner(s),
- wherein the removable arc chamber liner(s) are configured to be removed and inserted from the interior space of the arc chamber,
- wherein the removeable arc chamber liner(s) are surface graded with a graphite-containing material, a carbide-containing material, a fluoride-containing, a nitride-containing, an oxide-containing material, or a ceramic, and
- wherein the surface grading is achieved by applying the graphite-containing material, the carbide-containing material, the fluoride-containing, the nitride-containing, the oxide-containing material, or the ceramic to the arc chamber liner(s) and then integrating into the arc chamber liner(s).
A method for implanting one or more fluorine ion species, the method comprising:
- providing a system wherein the system comprises
- a gas source, wherein the gas source comprising a fluorine compound, and wherein the fluorine compound is capable of generating at least one fluorine ion species when ionized;
- an arc chamber comprising arc chamber piece(s) with at least three materials,
- wherein the at least three materials comprise a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic,
- wherein the arc chamber piece(s) are surface graded with the at least three materials, whereby surface grading is achieved by applying at least one of the at least three materials to the arc chamber piece(s) and then integrating at least one of the at least three materials into the arc chamber piece(s);
- and
- a substrate presented in the arc chamber;
- and
- operating the system to implant the one or more fluorine ion species into the substrate.
Dependencies are inferred from the claim text.