Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method

A method for depositing an epitaxial layer on a front side of a semiconductor wafer comprising monocrystalline material, the method comprising:

• providing the semiconductor wafer;
• arranging the semiconductor wafer on a susceptor;
• heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer;
• conducting a deposition gas over the front side of the semiconductor wafer;
• and
• selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer such that first partial regions at an edge of the semiconductor wafer are heated with the reduced intensity as compared to adjacent second partial regions, wherein the first partial regions have a characteristic greater growth rate of the epitaxial layer as compared to the adjacent second partial regions under a uniform temperature of the semiconductor wafer as a result of an orientation of the monocrystalline material, and
• wherein a ring that is held by susceptor carrying arms is arranged below the susceptor, the ring having inwardly facing projections, the projections each comprising a web and a ring segment, wherein the ring segment consists of a material having a low transmittance in an infrared (IR) range of the spectrum and has a width in a circumferential direction which, expressed as an aperture angle α, is not less than 15° and not more than 25°.