Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device
AssigneeKing Abdullah University of Science and Technology
InventorsMing-Hui Chiu, Hao-Ling Tang, Lain-Jong Li
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Abstract
A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.
Claims20
A method for growing a transition metal dichalcogenide layer, the method comprising:
- arranging a substrate, which includes a first area having a first transition metal contained pad, in a chemical vapor deposition chamber, the substrate also having a second area free of a transition metal, adjacent to the first transition metal contained pad;
- arranging a chalcogen contained precursor upstream of the substrate in the chemical vapor deposition chamber;
- and
- heating the chemical vapor deposition chamber for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in the second area, adjacent to the first transition metal contained pad.
A transition metal dichalcogenide growth device, comprising:
- a substrate having first and second areas, adjacent to each other;
- a transition metal contained pad arranged on the first area of the substrate;
- and
- a transition metal dichalcogenide layer containing a transition metal from the transition metal contained pad, the transition metal dichalcogenide layer being arranged on the second area of the substrate, adjacent to the transition metal contained pad.
A method for forming a semiconductor device, the method comprising:
- growing a transition metal dichalcogenide layer by
- arranging a substrate, which includes a first area having a first transition metal contained pad in a chemical vapor deposition chamber, the substrate also having a second area free of a transition metal, adjacent to the first transition metal contained pad;
- arranging a chalcogen contained precursor upstream of the substrate in the chemical vapor deposition chamber;
- and
- heating the chemical vapor deposition chamber for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad, is formed in the second area, adjacent to the first transition metal contained pad;
- and
- forming a remaining portion of the semiconductor device outside of the chemical vapor deposition chamber using a complementary metal oxide semiconductor process.
Dependencies are inferred from the claim text.