Back to results
US 11,538,681 B2Granted
Epitaxy substrate and method of manufacturing the same
AssigneeGlobalWafers Co., Ltd.
InventorsYing-Ru Shih, Chih-Yuan Chuang, Chun-I Fan, Wen-Ching Hsu
Life of this patent
Estimating the term…
Abstract
An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (Å) and 500 angstroms.
Claims7
An epitaxy substrate, comprising:
- a silicon substrate, having a first surface and a second surface opposite to each other, wherein the first surface is an epitaxy surface, wherein a surface roughness of the first surface of the silicon substrate is between 0.1 nm and 0.3 nm;
- and
- a silicon carbide layer, formed in the silicon substrate to entirely divide the silicon substrate into two parts along a plane parallel to the first surface, wherein a distance between the silicon carbide layer and the first surface is between 100 angstroms and 500 angstroms, the silicon carbide layer is a multi-layered structure, the multi-layered structure at least comprises a first layer and a second layer, and the first layer is located between the second layer and the first surface, wherein the first layer is not in contact with the second layer directly.
An epitaxy substrate, comprising:
- a silicon substrate, having a first surface and a second surface opposite to each other, wherein the first surface is an epitaxy surface;
- and
- a silicon carbide layer, located in the silicon substrate, the silicon carbide layer is a multi-layered structure, the multi-layered structure comprises a first layer and a second layer, the first layer is not in contact with the second layer directly, and the first layer is located between the second layer and the first surface, wherein a distance between the first layer and the second layer is between 100 angstroms and 500 angstroms, and a distance between the first layer and the first surface is between 100 angstroms and 500 angstroms.
Dependencies are inferred from the claim text.