Semiconductor manufacturing parts comprising SiC deposition layer, and manufacturing method therefor
AssigneeTokai Carbon Korea Co., Ltd
InventorsJoung Il Kim, Ki Won Kim, Jong Hyun Kim
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Abstract
The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.
Claims12
A semiconductor manufacturing part comprising a SiC deposition layer, the semiconductor manufacturing part comprising:
- a base material;
- and
- the SiC deposition layer formed on the base material,
- wherein a thickness ratio of the base material and the SiC deposition layer is 1:1 to 100:1, wherein the base material is in a stepped structure having a step above at least two base portions on at least two opposite sides of the step, and each base portion comprising a top above a vertical side,
- wherein a cross-section of the step comprises at least two bent surfaces, each bent surface projecting, at least partially, in a vertically upward direction from the top of each corresponding base portion, each bent surface forming obtuse angles with both the top of the corresponding base portion and the corresponding side of the step, and
- wherein a thickness of the SiC deposition layer formed on an upper surface of the base material is 1.5 to 3 times compared to that of the SiC deposition layer formed on a lower surface of the base material.
A method of manufacturing a semiconductor manufacturing part comprising a SiC deposition layer, the method comprising:
- preparing a base material comprising at least one selected from a group consisting of graphite, reaction sintered SiC, pressureless sintered SiC, hot press SiC, recrystallized SiC, and
- CVD SiC;
- and
- forming the SiC deposition layer on the base material,
- wherein the base material is in a stepped structure having a step above at least two base portions on at least two opposite sides of the step,
- and each base portion comprising a top above a vertical side,
- wherein a cross-section of the step comprises at least two bent surfaces each bent surface projecting, at least partially, in a vertically upward direction from the top of each corresponding base portion, each bent surface forming obtuse angles with both the top of the corresponding base portion and the corresponding side of the step,
- wherein, during the forming of the SiC deposition layer, the base material is mounted on only a jig,
- wherein the jig has a tapered shape and its width linearly increases in a direction towards a surface contact portion of the base material, and
- wherein an angle, over which the SiC deposition layer is formed, between a linearly tapered surface of the jig and a bottom surface of the base material is an obtuse angle.
Dependencies are inferred from the claim text.