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US 11,538,678 B2Granted
Deposition method
AssigneeTokyo Electron Limited
InventorsMasami Oikawa, Yuya Takamura
Life of this patent
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Abstract
A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.
Claims10
A method of depositing a film, the method comprising:
- performing a plurality of execution cycles serially, each of the plurality of execution cycles including
- supplying a raw material gas into a process chamber;
- and
- supplying, into the process chamber, a reactant gas that reacts with the raw material gas;
- wherein
- at least one execution cycle of the plurality of execution cycles includes
- adjusting a pressure in the process chamber without supplying the raw material gas, the adjusting of the pressure being performed prior to the supplying of the raw material gas.
4 more elements
Dependencies are inferred from the claim text.