Systems and methods for depositing high density and high tensile stress films

#The present technology relates to deposition processes and chambers. More specifically, the present technology relates to methods of producing high density and high tensile stress films at low temperatures.

#Integrated circuits are made possible by processes that produce intricately patterned material layers on substrate surfaces. Producing patterned material on a substrate requires controlled methods for forming and removing material. Plasma-enhanced deposition may produce films having certain characteristics, which may affect the performance of the device. The characteristics of the film may be adjusted or enhanced by modifying the deposition conditions, such as the chemistry and frequency of the plasma.

#Thus, there is a need for improved systems and methods that can be used to produce high quality devices and structures. These and other needs are addressed by the present technology.

#A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings.

#FIG. 1 shows a top plan view of an exemplary processing system according to some embodiments of the present technology.

#FIG. 2 shows a schematic cross-sectional view of an exemplary plasma system according to some embodiments of the present technology.

#Several of the figures are included as schematics. It is to be understood that the figures are for illustrative purposes, and are not to be considered of scale unless specifically stated to be of scale. Additionally, as schematics, the figures are provided to aid comprehension and may not include all aspects or information compared to realistic representations, and may include exaggerated material for illustrative purposes.

#In the appended figures, similar components and/or features may have the same reference label. Further, various components of the same type may be distinguished by following the reference label by a letter that distinguishes among the similar components. If only the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the letter.

#Plasma enhanced deposition processes may energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films may be produced to develop semiconductor structures, including conductive and dielectric films, as well as films to facilitate transfer and removal of materials. For example, in memory development, such as DRAM, deposition of films may be performed to produce the cell structures. In order to reduce the thermal budget and prevent damage to materials that have already been deposited, it is desirable to use a low-temperature deposition process. For example, the temperature during deposition of the film may be less than or about 550° C., less than or about 450° C., or even less.