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US 11,538,667 B2Granted
Stage, plasma processing apparatus, and plasma processing method
AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Satoru Kawakami, Sumi Tanaka
Life of this patent
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Abstract
A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.
Claims16
A stage comprising:
- a stage body having a placement surface;
- a radio-frequency electrode embedded in a region below an outer periphery of the placement surface of the stage body;
- and
- a plurality of transmission lines connected to the radio-frequency electrode,
- wherein the stage body is made of ceramics, and
- the radio-frequency electrode extends in a thickness direction of the stage body and has a thickness thicker than that of each of the plurality of transmission lines.
3 more elements
A plasma processing apparatus comprising:
- a processing container configured to perform a plasma processing;
- a stage accommodated in the processing container;
- and
- a gas source configured to supply a gas for generating plasma in the processing container,
- wherein the stage includes:
- a stage body having a placement surface;
- a radio-frequency electrode embedded in a region below an outer periphery of the placement surface of the stage body and
- a plurality of transmission lines connected to the radio-frequency electrode,
- wherein the stage body is made of ceramics,
- the radio-frequency electrode extends in a thickness direction of the stage body and has a thickness thicker than that of each of the plurality of transmission lines, and
- a maximum diameter of the placement surface is set to be smaller than a maximum diameter of a substrate to be placed on the placement surface.
8 more elements
Dependencies are inferred from the claim text.