Plasma processing apparatus and method of fabricating semiconductor device using same

A plasma processing apparatus comprising:

• a chamber;
• a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer;
• an RF rod disposed on the lower surface of the lower electrode and downwardly extending;
• an RF plate including a first portion contacting with the lower surface of the lower electrode, a second portion extending downward from the first portion towards the RF rod, and a third portion extending downward from the second portion to connect the RF rod;
• a first grounding electrode spaced apart from the RF plate and at least partially surrounding a side wall of the RF rod and a side wall of the second portion of the RF plate;
• an insulator ring at least partially surrounding a side wall of the lower electrode and a side wall of the first portion of the RF plate;
• and
• a conductor ring at least partially surrounding a side wall of the insulator ring,
• wherein the first grounding electrode includes a first side wall portion vertically extending along the side wall of the RF rod, and first wing portions spaced apart from one another, respectively having a curved shape and extending along the side wall of the second portion of the RF plate and towards an edge of the first portion of the RF plate.