Apparatus and methods for smart verify with neighbor plane disturb detection
AssigneeSanDisk Technologies LLC
InventorsXuan Tian, Guanhua Yin, Liang Li
Life of this patent
Estimating the term…
Abstract
An apparatus is provided that includes a plurality of non-volatile memory cells and a control circuit coupled to the non-volatile memory cells. The control circuit is configured to perform a first program-verify iteration on a first set of non-volatile memory cells coupled to a first word line to determine a first starting program voltage that programs the first set of the non-volatile memory cells to a first programmed state, and program a second set of non-volatile memory cells coupled to the first word line beginning with the first starting program voltage only if a defect condition does not exist.
Claims20
An apparatus comprising:
- a plurality of non-volatile memory cells;
- and
- a control circuit coupled to the non-volatile memory cells, the control circuit configured to:
- perform a first program-verify iteration on a first set of non-volatile memory cells coupled to a first word line to determine a first starting program voltage that programs the first set of the non-volatile memory cells to a first programmed state;
- and
- program a second set of non-volatile memory cells coupled to the first word line beginning with the first starting program voltage only if a defect condition does not exist.
An apparatus comprising:
- a plurality of non-volatile memory cells;
- and
- a control circuit coupled to the non-volatile memory cells, the control circuit configured to:
- program and verify a first set of the memory cells coupled to a first word line on a first plane and a second plane to determine a first starting program voltage needed to program the first set of memory cells to a particular programmed state;
- determine that the first plane programs more slowly than the second plane by a predetermined amount;
- program and verify a second set of the memory cells coupled to the first word line on the second plane to determine a second starting program voltage needed to program the second set of memory cells to the particular programmed state;
- terminate programming memory cells coupled to the first word line on the first plane;
- and
- program a third set of the memory cells coupled to the first word line on the second plane beginning with the second starting program voltage.
A method comprising:
- concurrently programming non-volatile memory cells coupled to a first word line on a first plane and a second plane;
- determining that the first plane programs more slowly than the second plane by a predetermined amount;
- terminating programming the non-volatile memory cells coupled to the first word line on the first plane;
- and
- performing program-verify iteration on a first set of the non-volatile memory cells coupled to the first word line on the second plane to determine a starting program voltage that programs the first set of the non-volatile memory cells to a first programmed state.
Dependencies are inferred from the claim text.