Charge separation for memory sensing
AssigneeMicron Technology, Inc.
InventorsUmberto Di Vincenzo, Riccardo Muzzetto, Ferdinando Bedeschi
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Abstract
The present disclosure includes apparatuses, methods, and systems for charge separation for memory sensing. An embodiment includes applying a sensing voltage to a memory cell, and determining a data state of the memory cell based, at least in part, on a comparison of an amount of charge discharged by the memory cell while the sensing voltage is being applied to the memory cell before a particular reference time and an amount of charge discharged by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time.
Claims20
An apparatus, comprising:
- a memory cell having a ferroelectric material;
- a first capacitor and a second capacitor;
- a first transistor configured to couple the first capacitor to the memory cell before a reference time;
- and
- a second transistor configured to couple the second capacitor to the memory cell after the reference time.
A method of operating memory, comprising:
- determining a data state of a memory cell based, at least in part, on a comparison of:
- an amount of charge discharged by the memory cell while a first sensing voltage is being applied to the memory cell, wherein the first sensing voltage is less than a particular voltage;
- and
- an amount of charge discharged by the memory cell while a second sensing voltage is being applied to the memory cell, wherein the second sensing voltage is greater than the particular voltage.
An apparatus, comprising:
- a memory cell;
- a cascode coupled to the memory cell, wherein:
- the cascode is a field-effect transistor;
- and
- the cascode is configured to bias the memory cell at a sensing voltage;
- and
- a first capacitor coupled to the memory cell through the cascode and a second capacitor coupled to the memory cell through the cascode.
Dependencies are inferred from the claim text.