Resetting method of resistive random access memory

A resetting method of a resistive random access memory (RRAM), comprising:

• performing a reset loop on at least one resistive memory cell, comprising:
• performing a first resetting operation on the at least one resistive memory cell, and performing a first verifying operation on the at least one resistive memory cell after the first resetting operation is finished;
• determining whether to perform a second resetting operation on the at least one resistive memory cell according to a verifying result of the first verifying operation, and performing a second verifying operation on the at least one resistive memory cell after the second resetting operation is determined to be performed and is finished;
• and
• determining whether to perform a healing resetting operation on the at least one resistive memory cell according to a verifying result of the second verifying operation, which comprises:
• performing the healing resetting operation on the at least one resistive memory cell when a verifying current of the second verifying operation is greater than a predetermined current,
• wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation,
• wherein the at least one resistive memory cell comprises:
• a data storage layer, disposed between an upper electrode and a lower electrode;
• an oxygen gettering layer, disposed between the data storage layer and the upper electrode;
• a first barrier layer, disposed between the oxygen gettering layer and the data storage layer;
• a first oxygen supplying layer, disposed between the oxygen gettering layer and the upper electrode;
• and
• a second barrier layer disposed between the first oxygen supplying layer and the upper electrode to be in contact with the first oxygen supplying layer and the upper electrode.