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US 11,538,519 B2Granted
Method of adjusting a read margin of a memory and corresponding device
AssigneeSTMicroelectronics S.r.l.
InventorFaress Tissafi Drissi
Life of this patent
Estimating the term…
Abstract
Methods and devices for adjusting a read threshold voltage of bitlines are provided. One such method includes adjusting a read threshold voltage of bitlines coupled to memory points of a memory circuit. The read threshold voltage is initially set to a first value. First data are written in the memory points and second data are read from the memory points. The second data are compared to the first data, and the threshold voltage is decreased by a second value in response to a comparison error of one of the second data with the corresponding first data.
Claims20
A method, comprising:
- enabling adjustment of a read margin of a memory;
- and
- in response to the enabling of the adjustment of the read margin of the memory:
- setting initial values of one or more read threshold configuration signals associated with a plurality of memory points of the memory;
- writing first data in the plurality of memory points;
- reading second data from the plurality of memory points;
- comparing the second data to the first data;
- in response to the comparing indicating the first data and the second data are different, adjusting current values of the one or more read threshold configuration signals to increment the read margin of the memory, and repeating the writing, reading and comparing;
- and
- in response to the comparing indicating the first data and the second data match, storing the current values of the one or more read threshold configuration signals.
7 more elements
A device, comprising:
- a plurality of memory points, which, in operation, store data;
- a plurality of bitlines coupled to the memory points;
- and
- a control circuit, which, in operation, responds to enabling of an adjustment of a read margin of the memory by:
- setting initial values of one or more read threshold configuration signals associated with the plurality of memory points of the memory;
- writing first data in the plurality of memory points;
- reading second data from the plurality of memory points;
- comparing the second data to the first data;
- in response to the comparing indicating the first data and the second data are different, adjusting current values of the one or more read threshold configuration signals to increment the read margin of the memory, and repeating the writing, reading and comparing;
- and
- in response to the comparing indicating the first data and the second data match, storing the current values of the one or more read threshold configuration signals.
8 more elements
A memory device, comprising:
- a plurality of memory points, which, in operation, store data;
- a plurality of bitlines coupled to the memory points;
- a read and write circuit, which, in operation, reads and writes data in the memory points;
- and
- a control circuit coupled to the read and write circuit, wherein the control circuit, in a read margin adjustment phase of operation:
- sets initial values of one or more read threshold configuration signals associated with the plurality of memory points of the memory;
- causes the read and write circuit to write first data into the plurality of memory points;
- causes the read and write circuit to read second data from the plurality of memory points;
- compares the second data to the first data;
- in response to the comparing indicating the first data and the second data are different, adjusts current values of the one or more read threshold configuration signals to increment a read margin of the memory, and repeats the causing of the writing, the causing of the reading and the comparing;
- and
- in response to the comparing indicating the first data and the second data match, stores the current values of the one or more read threshold configuration signals.
9 more elements
A non-transitory computer-readable medium having contents which configure a controller of a memory to perform a method, the method comprising:
- enabling adjustment of a read margin of a memory;
- and
- in response to the enabling of the adjustment of the read margin of the memory:
- setting initial values of one or more read threshold configuration signals associated with a plurality of memory points of the memory;
- writing first data in the plurality of memory points;
- reading second data from the plurality of memory points;
- comparing the second data to the first data;
- in response to the comparing indicating the first data and the second data are different, adjusting current values of the one or more read threshold configuration signals to increment the read margin of the memory, and repeating the writing, reading and comparing;
- and
- in response to the comparing indicating the first data and the second data match, storing the current values of the one or more read threshold configuration signals.
7 more elements
Dependencies are inferred from the claim text.