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US 11,537,151 B2Granted
Multi-channel flow ratio controller and processing chamber
AssigneeApplied Materials, Inc.
InventorMatthias Bauer
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AssigneeApplied Materials, Inc.
InventorMatthias Bauer
Estimating the term…
Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.
An apparatus, comprising:
An apparatus, comprising:
An apparatus, comprising:
Dependencies are inferred from the claim text.
Implementations of the present disclosure generally relate to a semiconductor processing chamber, and more particularly, to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber.
Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and micro-devices. One method of processing substrates includes depositing a material, such as a dielectric material or a semiconductive material, on an upper surface of the substrate. The material may be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of a substrate positioned on a support, and thermally decomposing the process gas to deposit a material from the gas onto the substrate surface. However, the material deposited on the surface of the substrate is often non-uniform in thickness and non-uniform in alloy or dopant compositions, and therefore, negatively affects the performance of the final manufactured device.
Therefore, there is a need for an improved chamber to deposit a material that is uniform in thickness and in alloy or dopant compositions.
FIG. 1 is a schematic side cross-sectional view of a chamber according to implementations described herein.
FIG. 2 is a perspective view of a liner assembly that can be used in the chamber of FIG. 1 according to implementations described herein.
FIG. 3 is a perspective view of the liner assembly and one or more flow ratio controllers that can be used in the chamber of FIG. 1 according to implementations described herein.
To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures. It is also contemplated that elements disclosed in one implementation may be beneficially utilized on other implementations without specific recitation.
Implementations of the present disclosure generally relate to using one or more flow ratio controllers and one or more gas injection inserts with a semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion of the gas injection insert includes a first plurality of channels and the second portion of the gas injection insert includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.
FIG. 1 illustrates a schematic side cross-sectional view of a chamber 100 according to implementations described herein. The chamber 100 may be used to process one or more substrates, including the deposition of a material on an upper surface of a substrate 108. The chamber 100 may include an array of radiant heating lamps 102 for heating, among other components, a back side 104 of a substrate support 106 disposed within the chamber 100. In some implementations, the array of radiant heating lamps 102 may be disposed over an upper dome 128. The substrate support 106 may be a disk-like substrate support 106 as shown, or may be a ring-like substrate support with no central opening, which supports the substrate from the edge of the substrate to facilitate exposure of the substrate to the thermal radiation of the lamps 102. In some implementations, the substrate support 106 may include multiple arms for supporting the substrate 108.
From the US filing history. Foreign family members aren’t listed.
About 10 years 3 months of term left · ends 27 Jan 2037 (estimated)
Controlling ratio of two or more flows of fluid or fluent material: characterised by the use of electric means
Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber: by purging residual gases from the reaction chamber…
Gas nozzles: nozzles for more than one gas
Characterised by the method of coating: controlling or regulating the coating process
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