Overlay correcting method, and photolithography method, semiconductor device manufacturing method and scanner system based on the overlay correcting method

An overlay correcting method comprising:

• collecting overlay data by measuring an overlay of a pattern;
• calculating first correction parameters by performing a first regression using the overlay data;
• determining whether the first correction parameters are greater than a correction limit of a scanner;
• calculating second correction parameters by performing ridge regression responsive to determining that at least one of the first correction parameters is greater than the correction limit of the scanner, wherein the second correction parameters are less than or equal to the correction limit of the scanner and a cost function formula of the ridge regression comprises a regularization term added to a cost function term;
• and
• providing the second correction parameters to the scanner.

A manufacturing method comprising:

• collecting overlay data by measuring an overlay of a pattern;
• calculating first correction parameters by performing a first regression using the overlay data;
• determining whether the first correction parameters are greater than a correction limit of a scanner;
• calculating second correction parameters by performing regularized regression responsive to determining that at least one of the first correction parameters is greater than the correction limit of the scanner, wherein the second correction parameters are less than or equal to the correction limit of the scanner and a cost function formula of the regularized regression comprises a regularization term added to a cost function term;
• providing the second correction parameters to the scanner;
• and
• performing, by the scanner, a photolithography process on an object to be patterned, based on the second correction parameters.