Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsChulho Kim, Chorong Park, Soohan Kim, Junghoon Kim, Jeonghun Park
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Abstract
A method of manufacturing a semiconductor device includes: forming a first outer box and a second outer box on a wafer, providing a photoresist layer on the wafer; and by removing a portion of the photoresist layer, forming a photoresist pattern including a first opening and a second opening that are horizontally apart from each other, wherein the first opening defines a first inner box superimposed on the first outer box in a plan view, the second opening defines a second inner box superimposed on the second outer box in the plan view, and a horizontal distance between the first opening and the second opening is about 150 μm to about 400 μm.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first outer box and a second outer box on a wafer;
- forming an insulating layer covering the first outer box and the second outer box;
- providing a photoresist layer on the insulating layer;
- and
- forming a photoresist pattern by exposing and developing the photoresist layer,
- wherein the photoresist pattern comprises:
- a first opening exposing a portion of a top surface of the insulating layer, the first opening having a square shape in a top view;
- a first inner box disposed in the first opening;
- a first shield exposing a portion of a top surface of the insulating layer and surrounding the first opening;
- a second opening horizontally apart from the first opening and having a square shape in a top view, the second opening exposing a portion of the top surface of the insulating layer;
- and
- a second inner box disposed in the second opening,
- wherein a horizontal width of the photoresist between the first opening and the second opening is substantially constant.
A method of manufacturing a semiconductor device, the method comprising:
- providing a wafer on which a first full shot, a second full shot, and a scribe lane between the first full shot and the second full shot are defined, wherein a first cell array region, a first word line contact region, and a first peripheral circuit region are defined in the first full shot, and a second cell array region, a second word line contact region, and a second peripheral circuit region are defined in the second full shot;
- defining an active region on the wafer by using a shallow trench isolation (STI) process;
- forming peripheral transistors in the first peripheral circuit region and the second peripheral circuit region;
- providing an ON mold in which eight or more interlayer insulating layers and eight or more sacrificial layers are alternately stacked on the wafer;
- providing a photoresist layer on the wafer;
- and
- forming a photoresist pattern by performing exposing and developing processes onto the photoresist layer,
- wherein the photoresist pattern includes a first opening defining a first inner box and a second opening defining a second inner box,
- the first opening and the second opening are formed on the scribe lane, and a distance between the first opening and the second opening is about 150 μm to about 400 μm.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first outer box on a wafer;
- forming an insulating layer covering the first outer box;
- providing a photoresist layer on the insulating layer;
- and
- forming a photoresist pattern by exposing and developing the photoresist layer,
- wherein the photoresist pattern comprises:
- a first opening exposing a portion of a top surface of the insulating layer, the first opening having a square shape in a top view;
- a first inner box disposed in the first opening;
- and
- a first shield exposing a portion of the top surface of the insulating layer and surrounding the first opening;
- and
- wherein the first shield horizontally surrounds the first outer box in a top view.
Dependencies are inferred from the claim text.