Extreme ultraviolet mask blank hard mask materials
AssigneeApplied Materials, Inc.
InventorsShuwei Liu, Wen Xiao, Vibhu Jindal, Azeddine Zerrade
Life of this patent
Estimating the term…
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
Claims20
A method of manufacturing an extreme ultraviolet (EUV) mask blank comprising:
- forming on a substrate a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs;
- forming a capping layer on the multilayer stack;
- forming an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material;
- and
- forming a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate;
- a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs;
- a capping layer on the multilayer stack of reflecting layers;
- an absorber layer, the absorber layer comprising a tantalum-containing material;
- and
- a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate;
- a multilayer stack which reflects EUV radiation, the multilayer stack comprising a plurality of reflective layer pairs including molybdenum (Mo) and silicon (Si);
- a capping layer on the multilayer stack of reflecting layers;
- an absorber layer, the absorber layer comprising a tantalum-containing material comprising TaN;
- and
- a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu, wherein the hard mask layer has an etch rate and the absorber layer has an etch rate such that there is an etch selectivity of the hard mask layer to the absorber layer is in a range of from 5:1 to 30:1.
Dependencies are inferred from the claim text.