Lens alignment system and method

A series tailored athermally stabilized optical system (STASOS) comprising:

• (a) optical lens source (OLS);
• (b) optical detector target (ODT);
• (c) first lens retaining tube (FRT);
• and
• (d) second lens retaining tube (SRT);
• wherein:
• said OLS comprises a lens reference plane (LRP) perpendicular to an optical axis of said OLS;
• said ODT comprises a focal reference plane (FRP) perpendicular to an optical axis of said ODT;
• said FRT comprises a material having a first thermal expansion (FTE) coefficient;
• said SRT comprises a material having a second thermal expansion (STE) coefficient;
• said FRT and said SRT are aligned along a common optical axis (COA);
• said FRT and said SRT are configured to align said OLS and ODT along said COA;
• said FRT and said SRT are configured to separate said OLS and ODT along said COA and define a predetermined focal distance (PFD) between said LRP and said FRP;
• said FRT is constructed from a thermalized metallic material (TMM) selected to produce in combination with said SRT a thermally neutral or controlled optical (TNO) variation in said PFD;
• said TMM is constructed by deforming a metallic material substantially comprising a first phase by applying tension in a first direction;
• said metallic material, subsequent to application of said tension and said deformation, is converted from said first phase to a second phase;
• said TMM, subsequent to said deformation, exhibits a first thermal expansion characteristic having a coefficient of thermal expansion within a predetermined range;
• said coefficient of thermal expansion is in at least said first direction;
• said TMM, subsequent to said deformation, exhibits a second thermal expansion characteristic in a second direction;
• and
• said TMM comprises a material selected from a group consisting of:
• (1) a material characterized by a general formula Ni100-A-BMnAXB, wherein X is at least one of Ga, In, Sn, Al, Sb, Co, or combinations thereof, and A is in a range from 0 to 50 atomic percent composition, and B is in a range from 0 to 50 atomic percent composition such that A plus B is less than 100;
• (2) a material characterized by a general formula Ni100-A-B-C MnACOBXC, wherein X is at least one of Ga, In, Sn, Al, Sb, or combinations thereof, and A is in a range from 0 to 50 atomic percent composition, B is in a range from 0 to 50 atomic percent composition, and C is in a range from 0 to 50 atomic percent composition such that A plus B plus C is less than 100;
• and
• (3) a material characterized by a general formula Ni100-A-BFeAGaB wherein A is in a range from 0 to 50 atomic percent composition, and B is in a range from 0 to 50 atomic percent composition such that A plus B is less than 100.