Optical dielectric waveguide structure

An assembly comprising

• a substrate;
• an interconnection layer disposed on the substrate,
• wherein the interconnection layer comprises at least an interconnection line,
• wherein a component of the interconnect layer is susceptible to be degraded at temperatures greater than 400 C;
• a waveguide on the interconnection layer,
• wherein the waveguide comprises a stack of two or more SiON layers,
• wherein the two or more SiON layers comprise at least two layers having different indexes of refraction,
• wherein the processes to completely form the waveguide are limited to temperatures less than or equal to 400 C;
• and
• a first device under the interconnection layer,
• wherein a terminal of the first device is connected to a first interconnection line of the at least an interconnection line.

An assembly comprising

• a substrate;
• a first device fabricated on the substrate;
• an interconnection layer disposed on at least a part of the substrate,
• wherein the interconnection layer comprises one or more interconnection lines,
• wherein a first interconnection line of the one or more interconnection lines is connected to a first terminal of the first device,
• wherein a component of the interconnect layer or the first device is susceptible to be degraded at temperatures greater than 400 C;
• a waveguide on the interconnection layer,
• wherein the waveguide comprises a stack of two or more SiON layers,
• wherein the two or more SiON layers comprise at least two layers having different indexes of refraction,
• wherein the processes to completely form the waveguide are limited to temperatures less than or equal to 400 C,
• a second device directly or indirectly coupled to the waveguide,
• wherein the second device comprises at least a second terminal,
• wherein a second interconnection line of the one or more interconnection lines is connected to the second terminal.

An assembly comprising

• a substrate;
• an interconnection layer disposed on the substrate,
• wherein the interconnection layer comprises at least an interconnection line,
• wherein a component of the interconnect layer is susceptible to be degraded at temperatures greater than 400 C;
• a waveguide on the interconnection layer,
• wherein the waveguide comprises a stack of two or more SiON layers,
• wherein the two or more SiON layers comprise at least two layers having different indexes of refraction,
• wherein the processes to completely form the waveguide are limited to temperatures less than or equal to 400 C;
• and
• a device optically coupled to the waveguide,
• wherein a terminal of the device is connected to the at least an interconnection line.

An assembly comprising

• a substrate;
• an interconnection layer disposed on the substrate,
• wherein the interconnection layer comprises at least an interconnection line,
• wherein a component of the interconnect layer is susceptible to be degraded at temperatures greater than 400 C;
• a waveguide on the interconnection layer,
• wherein the waveguide comprises a stack of two or more SiON layers,
• wherein the two or more SiON layers comprise at least two layers having different indexes of refraction,
• wherein the processes to completely form the waveguide are limited to temperatures less than or equal to 400 C;
• and
• a high heat conduction layer for removing thermal energy from a device formed coupling to the waveguide.