Method and apparatus to increase radar range

A method of manufacturing an integrated radar circuit, the method comprising:

• providing a first substrate, of a first material, on which is formed an integrated transmit and receive radar circuit;
• providing a second substrate, of a second material, comprising at least one through-substrate cavity having cavity walls;
• providing at least one discrete transistor chip, of a third material, on which is formed at least one discrete transistor, said at least one discrete transistor chip having chip walls;
• attaching said at least one discrete transistor chip in said through-substrate cavity with a metal filling extending from at least one cavity wall to at least one chip wall;
• forming on said second substrate a conductor electrically connecting a portion of said integrated transmit and receive radar circuit to said discrete transistor;
• wherein
• the first material is a first semiconductor material and the third material is a second semiconductor material.