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US 11,535,929 B2Granted
Apparatus for depositing a substrate and deposition system having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-Heon Park, Whankyun Kim, Sukhoon Kim, Junho Jeong
Life of this patent
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Abstract
An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.
Claims16
An ion beam deposition apparatus, comprising:
- a substrate assembly to secure a substrate;
- a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials;
- an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate;
- a supplementary ion gun to inject supplementary ion beams onto the substrate assembly;
- and
- a substrate heater to heat the substrate to a deposition temperature higher than a room temperature, the substrate heater including a lamp between the substrate assembly and the supplementary ion gun, and the lamp being outside the substrate assembly and emitting heat toward the substrate assembly.
3 more elements
An ion beam deposition apparatus, comprising:
- a process chamber to accommodate an ion beam deposition process;
- a substrate assembly inside the process chamber, the substrate assembly to secure a substrate;
- a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials;
- an ion gun inside the process chamber, the ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate;
- a supplementary ion gun inside the process chamber to inject supplementary ion beams onto the substrate assembly;
- a substrate heater inside the process chamber, the substrate heater being at a height level between a bottom of the substrate assembly and the supplementary ion gun, and the substrate heater to heat the substrate to a deposition temperature higher than a room temperature;
- a substrate terminal connected to the process chamber, the substrate terminal to accommodate a plurality of substrates;
- and
- a vacuum generator connected to the process chamber, the vacuum generator to apply a uniform predetermined vacuum pressure to the process chamber.
6 more elements
A deposition system, comprising:
- a substrate transfer apparatus including a substrate handler to transfer a substrate;
- a substrate terminal at a first side of the substrate transfer apparatus, the substrate terminal including at least a substrate carrier to accommodate a plurality of substrates;
- and
- at least one ion beam deposition apparatus at a second side of the substrate transfer apparatus, the at least one ion beam deposition apparatus to conduct an ion beam deposition process on the substrate to form a thin layer thereon,
- wherein the at least one ion beam deposition apparatus includes:
- a process chamber to accommodate the ion beam deposition process,
- a substrate assembly secured to a side of the process chamber and onto which the substrate is secured,
- a target assembly slanted with respect to the substrate assembly in the process chamber, the target assembly including a target with deposition materials,
- an ion gun inside the process chamber, the ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form the thin layer on the substrate,
- a supplementary ion gun in the chamber to inject supplementary ion beams toward the substrate assembly,
- a substrate heater inside the process chamber, the substrate heater being at a height level between a bottom of the substrate assembly and the supplementary ion gun, and the substrate heater to heat the substrate to a deposition temperature higher than a room temperature, and
- a vacuum generator connected to the process chamber, the vacuum generator to apply a uniform predetermined vacuum pressure to the process chamber.
9 more elements
Dependencies are inferred from the claim text.