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US 11,534,887 B2Granted
Polishing pad and method for preparing semiconductor device using same
AssigneeSKC solmics Co., Ltd.
InventorsJangwon Seo, Eun Sun Joeng, Jong Wook Yun
Life of this patent
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Abstract
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductor devices. The polishing pad may secure excellent polishing rate and within-wafer non-uniformity by controlling the physical properties such as initial load resistivity and compressive elasticity of the cushion layer and/or the laminate as defined by Equations 1 and 2: L R L ( % ) = T 1 L - T 2 L T 1 L - T 3 L × 100 [ Equation 1 ] C E L ( % ) = T 4 L - T 3 L T 2 L - T 3 L × 1 00. [ Equation 2 ]
Claims14
A polishing pad, which comprises a laminate composed of a polishing layer, an adhesive layer, and a cushion layer,
- wherein a hardness of the cushion layer is 68 to 74 Asker C,
- wherein the polishing layer comprises a cured product of a composition comprising a urethane-based prepolymer, a curing agent, and a foaming agent, and satisfying at least one of the following (i), (ii), and (iii):
- (i) the urethane-based prepolymer comprises a reaction product of at least one isocyanate compound and at least one polyol,
- (ii) the curing agent is at least one selected from the group consisting of an amine compound and an alcohol compound, and
- (iii) the foaming agent is at least one selected from the group consisting of a solid phase foaming agent and a gas phase foaming agent, and
- wherein a initial load resistivity (LRL) of the laminate defined by the following Equation 1 is 88% or more:
- L
-
- R
- L
-
- (
- %
- )
- =
- T
-
- 1
-
- L
- -
- T
-
- 2
-
- L
- T
-
- 1
-
- L
- -
- T
-
- 3
-
- L
- ×
- 1
-
- 0
-
- 0
- [
- Equation
-
-
- 1
- ]
- in Equation 1,
- the T1L is the thickness of the laminate in the no-load state,
- the T2L is the thickness of the laminate when a stress load of 30 kPa is maintained for 60 seconds from the no-load state, and
- the T3L is the thickness of the laminate when a stress load of 50 kPa is maintained for 60 seconds from the T2L state.
50 more elements
A polishing pad, which comprises a polishing layer and a cushion layer,
- wherein the hardness of the cushion layer is 69 to 80 Asker C,
- wherein the polishing layer comprises a cured product of a composition comprising a urethane-based prepolymer, a curing agent, and a foaming agent, and satisfying at least one of the following (i), (ii), and (iii):
- (i) the urethane-based prepolymer comprises a reaction product of at least one isocyanate compound and at least one polyol,
- (ii) the curing agent is at least one selected from the group consisting of an amine compound and an alcohol compound, and
- (iii) the foaming agent is at least one selected from the group consisting of a solid phase foaming agent and a gas phase foaming agent, and
- wherein a initial load resistivity (LRC) of the cushion layer defined by the following Equation 5 is 45% or more:
- L
-
- Rc
-
- (
- %
- )
- =
- T
-
- 1
-
- c
- -
- T
-
- 2
-
- c
- T
-
- 1
-
- c
- -
- T
-
- 3
-
- c
- ×
- 1
-
- 0
-
- 0
- [
- Equation
-
-
- 5
- ]
- in Equation 5,
- the T1C is the thickness of the cushion layer in the no-load state,
- the T2C is the thickness of the cushion layer when a stress load of 30 kPa is maintained for 60 seconds from the no-load state, and
- the T3C is the thickness of the cushion layer when a stress load of 50 kPa is maintained for 60 seconds from the T2C state.
49 more elements
A process for preparing a semiconductor device, which comprises:
- preparing a polishing pad comprising a laminate composed of a polishing layer, an adhesive layer, and a cushion layer;
- and
- relatively rotating the surface of the polishing layer of the polishing pad and the surface of a wafer while they are in contact with each other to polish the surface of the wafer,
- wherein a initial load resistivity (LRL) of the laminate defined by Equation 1 is 88% or more:
- L
-
- R
- L
-
- (
- %
- )
- =
- T
-
- 1
-
- L
- -
- T
-
- 2
-
- L
- T
-
- 1
-
- L
- -
- T
-
- 3
-
- L
- ×
- 1
-
- 0
-
- 0
- [
- Equation
-
-
- 1
- ]
- in Equation 1,
- the T1L is the thickness of the laminate in the no-load state,
- the T2L is the thickness of the laminate when a stress load of 30 kPa is maintained for 60 seconds from the no-load state, and
- the T3L is the thickness of the laminate when a stress load of 50 kPa is maintained for 60 seconds from the T2L state;
- wherein a hardness of the cushion layer is 68 to 74 Asker C;
- and
- wherein the polishing layer comprises a cured product of a composition comprising a urethane-based prepolymer, a curing agent, and a foaming agent, and satisfying at least one of the following (i), (ii), and (iii):
- (i) the urethane-based prepolymer comprises a reaction product of at least one isocyanate compound and at least one polyol,
- (ii) the curing agent is at least one selected from the group consisting of an amine compound and an alcohol compound, and
- (iii) the foaming agent is at least one selected from the group consisting of a solid phase foaming agent and a gas phase foaming agent.
54 more elements
Dependencies are inferred from the claim text.