Micro-channel device and manufacturing method thereof and micro-fluidic system
AssigneeBoe Technology Group Co., Ltd.
InventorsCe Ning, Xiaochen Ma, Hehe Hu, Guangcai Yuan, Xin Gu
Life of this patent
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Abstract
The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.
Claims11
A micro-channel device, comprising:
- a micro-channel structure comprising a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns, wherein the cover layer and the base layer are configured to form a plurality of micro-channels, the cover layer covers the plurality of rails, each of the plurality of micro-channels is formed between two adjacent rails, and the plurality of rails and the plurality of micro-channels are arranged alternatively;
- and
- a semiconductor junction comprising a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer, wherein the P-type semiconductor layer, the intrinsic semiconductor layer, and the N-type semiconductor layer are placed together, the base layer and the cover layer are placed together, the micro-channel structure and the semiconductor junction form an integrated structure;
- wherein the plurality of columns and the plurality of rails have a one-to-one correspondence, and each of the plurality of columns has a ridge formed at a position corresponding to one of the plurality of rails;
- and the N-type semiconductor layer is the base layer of the micro-channel structure, the plurality of rails is directly formed on the base layer, the plurality of rails is made of the same material as the base layer, the cover layer is in physical contact with the N-type semiconductor layer, and the cover layer is made of a transparent conductive material.
A method of manufacturing a micro-channel device, comprising:
- forming a micro-channel structure comprising a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns:
- and
- integrating a semiconductor junction with the micro-channel structure
- wherein the cover layer and the base layer are configured to form a plurality of micro-channels, the cover layer covers the plurality of rails, each of the plurality of micro-channels is formed between two adjacent rails, and the plurality of rails and the plurality of micro-channels are arranged alternatively;
- the semiconductor junction comprises a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction;
- and
- the plurality of columns and the plurality of rails have a one-to-one correspondence, and each of the plurality of columns has a ridge formed at a position corresponding to one of the plurality of rails.
Dependencies are inferred from the claim text.