Organic photoelectronic device and image sensor

An organic photoelectronic device, comprising:

• a first electrode and a second electrode facing each other, one of the first electrode and the second electrode being an anode of the organic photoelectronic device and the other being a cathode of the organic photoelectronic device;
• and
• a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including,
• a first photoelectric conversion region nearer to the first electrode, and a second photoelectric conversion region nearer to the second electrode, and
• a doped region between the first photoelectric conversion region and the second photoelectric conversion region, such that the first photoelectric conversion region, the doped region, and the second photoelectric conversion region are sequentially disposed along a thickness direction of the light-absorption layer,
• wherein each of the first photoelectric conversion region and the second photoelectric conversion region includes a p-type light-absorbing material and an n-type light-absorbing material forming a bulk heterojunction, at least one of the p-type light-absorbing material and the n-type light-absorbing material being configured to selectively absorb a part of visible light, and
• the doped region includes the p-type light-absorbing material, the n-type light-absorbing material, and an exciton quencher,
• wherein, in the doped region, the exciton quencher is included in each of the p-type light-absorbing material and the n-type light-absorbing material as a dopant,
• the exciton quencher includes a metal, a semi-metal, a metal oxide, a semi-metal oxide, or a combination thereof.