Neuron circuit using p-n-p-n diode without external bias voltages
AssigneeKorea University Research and Business Foundation
InventorsSang Sig Kim, Kyoung Ah Cho, Young Soo Park, Doo Hyeok Lim, Sol A Woo
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Abstract
The present disclosure relates to a novel neuron circuit using a p-n-p-n diode to realize small size and low power consumption. The neuron circuit according to one embodiment of the present disclosure may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a critical value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor.
Claims13
A neuron circuit, wherein the neuron circuit generates potential by charging current input from synapses through a capacitor,
- wherein when the generated potential exceeds a critical value, the neuron circuit generates and outputs a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor, and
- wherein the p-n-p-n diode generates a spike voltage corresponding to the generated potential using an avalanche breakdown phenomenon occurred inside a diode device by an anode voltage.
A neuron circuit, wherein the neuron circuit generates potential by charging current input from synapses through a capacitor,
- wherein when the generated potential exceeds a critical value, the neuron circuit generates and outputs a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor,
- wherein the neuron circuit resets the generated spike voltage using one or more transistors connected to the p-n-p-n diode,
- wherein an anode electrode of the p-n-p-n diode is connected in parallel to the capacitor, and a cathode electrode of the p-n-p-n diode is connected to the transistors,
- wherein, among the transistors, a gate electrode of a first transistor is connected to a gate line, and a drain electrode of the first transistor is connected in series to the cathode electrode of the p-n-p-n diode,
- wherein a gate electrode and drain electrode of a second transistor are commonly connected to the drain electrode of the first transistor and a source electrode of the p-n-p-n diode, and
- wherein a drain electrode of a third transistor is commonly connected to the capacitor and the anode electrode of the p-n-p-n diode, and a gate electrode of the third transistor is commonly connected to the gate electrode and drain electrode of the second transistor.
A neuron circuit, wherein the neuron circuit generates potential by charging current input from synapses through a capacitor,
- wherein when the generated potential exceeds a critical value, the neuron circuit generates and outputs spike current corresponding to the generated potential using a p-n-p-n diode connected to the capacitor,
- wherein the neuron circuit resets the generated spike current using one or more transistors connected to the p-n-p-n diode, and
- wherein the p-n-p-n diode generates a spike voltage corresponding to the generated potential using an avalanche breakdown phenomenon occurred inside a diode device by an anode voltage.
Dependencies are inferred from the claim text.