Memory apparatus capable of autonomously detecting and repairing fail word line and memory system including the same

A memory system comprising:

• multiple memory apparatuses coupled to each other, and
• an information analyzer coupled to each of the multiple memory apparatuses,
• each of the multiple memory apparatuses comprises:
• a cell array comprising multiple first word lines each including multiple first memory cells and multiple second word lines each including multiple second memory cells;
• a fuse array configured to replace a selection word line of the multiple first word lines with one of the multiple second word lines;
• a fail determiner, coupled to the cell array, configured to determine, as fail word lines, word lines, each of which satisfy a first condition, during an access operation for the multiple first word lines and to determine a fail grade of each of the fail word lines based on a second condition;
• an information storage configured to store a physical address, fail grade and access count of each of the fail word line as determination information for the corresponding fail word line;
• and
• a rupture operation component, coupled to between the fuse array and the information storage, configured to perform a selection operation of selecting the selection word line from the fail word lines in response to a first control signal of the information analyzer and perform a rupture operation of rupturing a physical address of the selection word line into the fuse array in response to a second control signal of the information analyzer,
• wherein the information analyzer is configured to analyze the determination information stored in the information storage of each of the multiple memory apparatuses and to generate the first and second control signals based on a result of the analysis.