Lithography patterning with flexible solution adjustment
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Cheng Wang
Life of this patent
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Abstract
A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.
Claims20
A method for lithography patterning, comprising:
- forming a first layer over a substrate, the first layer being radiation-sensitive;
- exposing the first layer to a radiation;
- mixing a first solution and a second solution, thereby forming a developer;
- and
- dispensing the developer to the exposed first layer, resulting in a pattern over the substrate,
- wherein the dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.
A method for lithography patterning, comprising:
- providing a substrate;
- forming a first layer over the substrate, the first layer being radiation-sensitive;
- exposing the first layer to a radiation;
- dispensing a developer from a first nozzle onto the first layer to result in a pattern over the substrate, wherein the developer includes a developing chemical;
- dispensing a surfactant-containing treatment chemical from a second nozzle to the first layer, wherein a concentration of the surfactant-containing treatment chemical is adjustable;
- and
- dispensing a deionized water from a third nozzle to the first layer.
A method for lithography patterning, comprising:
- providing a substrate;
- forming a first layer over the substrate, the first layer being radiation-sensitive;
- exposing the first layer to a radiation;
- and
- applying a developer onto the exposed first layer to result in a pattern over the substrate, wherein the developer includes a developing chemical, the applying of the developer includes multiple stages, a concentration of the developing chemical in the developer increases from one stage to a subsequent stage in at least two consecutive stages in a first half of the multiple stages, and decreases from one stage to a subsequent stage in at least two consecutive stages in a second half of the multiple stages that is after the first half of the multiple stages.
Dependencies are inferred from the claim text.