Support device, design support system, electrical device, and design support method

A design support method, comprising:

• executing a first processing,
• the first processing including
• setting a control value group for a semiconductor element, the semiconductor element including a plurality of gates, the plurality of gates including a first gate and a second gate, the control value group including a first time difference between a first timing at which a voltage is applied to the first gate and a second timing at which a voltage is applied to the second gate,
• calculating a characteristic value from an output result when an electrical signal corresponding to the control value group is input to the semiconductor element, the characteristic value indicating a characteristic of the semiconductor element, and
• calculating a first function from history data including not less than one data set, the data set including the control value group and a score based on the characteristic value;
• and
• setting a new control value group by using the first function;
• wherein
• the first processing is repeatedly executed, and
• one of the repeated executions of the first processing includes:
• a first sub-processing that includes the calculating of the first function;
• and
• a second sub-processing that includes the setting of the control value group and the calculating of the characteristic value, and
• the second sub-processing is executed while executing the first sub-processing.

A design support device, comprising:

• a processing circuit;
• a memory storing instructions that, when executed by the processing circuit, enable the processing circuit to execute a first processing,
• the first processing including
• setting a control value group for a semiconductor element, the semiconductor element including a plurality of gates, the plurality of gates including a first gate and a second gate, the control value group including a first time difference between a first timing at which a voltage is applied to the first gate and a second timing at which a voltage is applied to the second gate,
• calculating a characteristic value from an output result when an electrical signal corresponding to the control value group is input to the semiconductor element, the characteristic value indicating a characteristic of the semiconductor element, and
• calculating a first function from history data including not less than one data set, the data set including the control value group and a score based on the characteristic value,
• the processing circuit setting a new control value group by using the first function, wherein:
• the output result includes a change of a current over time, and a change of a voltage over time, and
• the characteristic value includes a power loss.