Through-silicon via crack detecting apparatus, detecting method, and semiconductor device fabrication method having the same

A method for detecting a through-silicon-via (TSV) crack, comprising:

• providing a first TSV and a TSV crack detecting apparatus on a semiconductor substrate, wherein the TSV crack detecting apparatus comprises:
• a test TSV disposed adjacent to and within a predetermined distance to the first TSV, wherein the test TSV comprises:
• a conductive channel and a first dielectric liner surrounding the conductive channel, the conductive channel and the first dielectric liner being disposed within the semiconductor substrate;
• a conductive liner disposed within the semiconductor substrate and surrounding the first dielectric liner;
• a second dielectric liner disposed within the semiconductor substrate and surrounding the conductive liner;
• a first contact disposed on the semiconductor substrate and electrically connected to the conductive channel;
• and
• a second contact disposed on the semiconductor substrate and electrically connected to the conductive liner;
• determining a voltage difference between the first contact and the second contact;
• determining, based on the voltage difference, whether the first contact is in conduction with the second contact;
• determining, in response to the first contact is in conduction with the second contact, that the test TSV in the TSV crack detecting apparatus has a crack, and that the first TSV has a crack;
• and
• determining, in response to the first contact is not in conduction with the second contact, that the test TSV in the TSV crack detecting apparatus has no crack, and that the first TSV has no crack.