Current sensor device

A current sensor device comprising:

• a silicon substrate having an active surface,
• a first sensing area disposed near a first edge of said active surface of said silicon substrate, said first sensing area comprising at least one first magnetic sensing element made of a first compound semiconductor material and at least four contact pads,
• a second sensing area disposed near a second edge of said active surface of said silicon substrate, said second edge being substantially opposite to said first edge, said second sensing area comprising at least one second magnetic sensing element made of a second compound semiconductor material and at least four contact pads,
• a processing circuit disposed in said silicon substrate and electrically connected via wire bonds and/or a redistribution layer with said contact pads of said first and of said second sensing area and arranged to derive a first signal based on signals received from said at least one first magnetic sensing element of said first sensing area, to derive a second signal based on signals received from said at least one second magnetic sensing element of said second sensing area and to compute a difference between said first and said second signal.