Pressure sensing element and pressure sensor having a diaphragm that includes a trench and a plurality of beams
AssigneeMitsumi Electric Co., Ltd.
InventorTakayuki Mori
Life of this patent
Estimating the term…
Abstract
Disclosed is a pressure sensing element that is formed using a semiconductor substrate, the pressure sensing element including: a frame; a diaphragm that is supported by the frame; and a piezoresistor that is arranged on the diaphragm. The diaphragm includes a trench and a plurality of beams, the beams are arranged such that the beams connect a portion around an edge of the diaphragm to a portion around a center of the diaphragm and the beams cross each other in the portion around the center of the diaphragm, and a beam that is each of the beams includes a narrow portion that has a first width and a wide portion that has a second width wider than the first width.
Claims18
A pressure sensing element that is formed using a semiconductor substrate, the pressure sensing element comprising:
- a frame;
- a diaphragm that is supported by the frame;
- and
- a piezoresistor that is arranged on the diaphragm,
- wherein:
- the diaphragm includes a trench and a plurality of beams,
- the beams are arranged such that the beams connect a portion around an edge of the diaphragm to a portion around a center of the diaphragm and the beams cross each other in the portion around the center of the diaphragm,
- each of the beams includes a narrow portion that has a first width and a wide portion that has a second width wider than the first width, and
- in each of the beams, (i) the wide portion is provided around a center in a longitudinal direction of the beam, and (ii) a width of the beam gradually becomes wider toward the wide portion from the narrow portion, the narrow portion being provided at a first end of the beam closer to the edge of the diaphragm and at a second end of the beam closer to the center of the diaphragm.
A pressure sensing element that is formed using a semiconductor substrate, the pressure sensing element comprising:
- a frame;
- a diaphragm that is supported by the frame;
- and
- a piezoresistor that is arranged on the diaphragm,
- wherein:
- the diaphragm includes a trench and a plurality of beams,
- the beams are arranged such that the beams connect a portion around an edge of the diaphragm to a portion around a center of the diaphragm and the beams cross each other in the portion around the center of the diaphragm,
- each of the beams includes a narrow portion that has a first width and a wide portion that has a second width wider than the first width, and
- in each of the beams, (i) the wide portion is provided at a position closer to the center of the diaphragm than a center in a longitudinal direction of the beam, and (ii) a width of the beam gradually becomes wider toward the wide portion from the narrow portion that is provided around an end close to the edge of the diaphragm.
A pressure sensing element that is formed using a semiconductor substrate, the pressure sensing element comprising:
- a frame;
- a diaphragm that is supported by the frame;
- and
- a piezoresistor that is arranged on the diaphragm,
- wherein:
- the diaphragm includes a trench and a plurality of beams,
- the beams are arranged such that the beams connect a portion around an edge of the diaphragm to a portion around a center of the diaphragm and the beams cross each other in the portion around the center of the diaphragm,
- each of the beams includes a narrow portion that has a first width and a wide portion that has a second width wider than the first width, and
- in each of the beams, (i) the wide portion is provided at a position closer to the edge of the diaphragm than a center in a longitudinal direction of the beam, and (ii) a width of the beam gradually becomes wider toward the wide portion from the narrow portion that is provided around an end close to the center of the diaphragm.
A pressure sensing element that is formed using a semiconductor substrate, the pressure sensing element comprising:
- a frame;
- a diaphragm that is supported by the frame;
- and
- a piezoresistor that is arranged on the diaphragm,
- wherein the diaphragm includes:
- a beam that protrudes in a direction toward a center of the diaphragm from an edge of the diaphragm;
- and
- a single trench that is formed in a range ranging from the edge of the diaphragm and the beam and including the center of the diaphragm.
Dependencies are inferred from the claim text.