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US 11,530,483 B2Granted
Substrate processing system
AssigneeASM IP Holding B.V.
InventorsYoonKi Min, YoungHoon Kim, HakJoo Lee, SeungJu Chun
Life of this patent
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Abstract
Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.
Claims18
A substrate processing system comprising:
- a reaction chamber providing a space where at least one substrate is processed;
- a substrate transfer chamber configured to supply the at least one substrate to the reaction chamber;
- a gas supply line connected to the substrate transfer chamber;
- and
- at least one heater configured to heat a gas supplied to the substrate transfer chamber,
- wherein, when the reaction chamber and the substrate transfer chamber communicate with each other, a pressure of the gas of the substrate transfer chamber is equal to or higher than a pressure of a gas of the reaction chamber,
- wherein the at least one heater comprises:
- a first heater arranged at the gas supply line;
- and
- a second heater arranged at the substrate transfer chamber.
7 more elements
A substrate processing system comprising:
- a first chamber providing a space where at least one substrate is accommodated;
- a second chamber configured to transfer the at least one substrate to the first chamber;
- a gas supply line connected to the second chamber;
- and
- a temperature control unit configured to change a temperature of a gas in the second chamber,
- wherein the temperature control unit comprises:
- a first heater arranged at the gas supply line;
- and
- a second heater arranged at the second chamber.
6 more elements
A substrate processing system comprising:
- a load lock chamber configured to accommodate at least one substrate;
- a reaction chamber providing a space where the at least one substrate is processed;
- a substrate transfer chamber configured to transfer the at least one substrate between the load lock chamber and the reaction chamber;
- a gas supplier configured to supply a gas to the substrate transfer chamber;
- a gas supply line connecting the gas supplier and the substrate transfer chamber;
- and
- at least one heater arranged at least one of the gas supplier, the substrate transfer chamber, and the gas supply line, and configured to heat the gas,
- wherein, when the reaction chamber and the substrate transfer chamber communicate, at least some of the gas heated by the at least one heater is introduced from the substrate transfer chamber to the reaction chamber, and
- the at least one heater is further configured to heat the gas before the at least one substrate is introduced to the reaction chamber and before the at least one substrate is discharged from the reaction chamber,
- wherein the at least one heater comprises:
- a first heater arranged at the gas supply line;
- and
- a second heater arranged at the substrate transfer chamber.
10 more elements
Dependencies are inferred from the claim text.