Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

#This non-provisional U.S. patent application claims priority under 35 U.S.C. § 119 of Japanese Patent Application No. 2019-165950, filed on Sep. 12, 2019, the entire contents of which are hereby incorporated by reference.

#The present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device and a non-transitory computer-readable recording medium.

#As an apparatus of processing a semiconductor substrate, a rotary type apparatus may be used. For example, according to the rotary type apparatus, a plurality of substrates are arranged on a substrate support of the rotary type apparatus along a circumferential direction, and various gases are supplied onto the plurality of the substrates by rotating the substrate support. In addition, a vertical type apparatus may also be used. For example, according to the vertical type apparatus, a source gas is supplied onto a plurality of substrates stacked in the vertical type apparatus by using a source gas nozzle extending along a stacking direction of the plurality of the substrates stacked in the vertical type apparatus.

#FIG. 1 schematically illustrates a horizontal cross-section of a reactor of a substrate processing apparatus according to a first embodiment described herein.

#FIG. 2 schematically illustrates a vertical cross-section taken along the line A-A′ of the reactor of the substrate processing apparatus according to the first embodiment shown in FIG. 1.

#FIG. 3 schematically illustrates a substrate support mechanism according to the first embodiment described herein.

#Hereinafter, one or more embodiments (also simply referred to as “embodiments”) according to the technique of the present disclosure will be described with reference to the drawings.

#As shown in FIGS. 1 and 2, a reactor 200 of a substrate processing apparatus (also referred to a “rotary type apparatus”) includes a process vessel 203 which is a cylindrical sealed vessel (hermetic vessel). For example, the process vessel 203 is made of a material such as stainless steel (SUS) and an aluminum alloy. A process chamber 201 in which a plurality of substrates including a substrate S are processed is provided in the process vessel 203. A gate valve 205 is connected to the process vessel 203. The substrate S is loaded (transferred) into or unloaded (transferred) out of the process vessel 203 through the gate valve 205.

#The process chamber 201 includes a process region 206 to which a process gas such as a source gas and a reactive gas is supplied and a purge region 207 to which a purge gas is supplied. According to the first embodiment, the process region 206 and the purge region 207 are alternately arranged along a circumferential direction of the process chamber 201. For example, a first process region 206a, a first purge region 207a, a second process region 206b and a second purge region 207b are arranged along the circumferential direction in this order. As described later, for example, the source gas is supplied into the first process region 206a, the reactive gas is supplied into the second process region 206b, and an inert gas serving as the purge gas is supplied into the first purge region 207a and the second purge region 207b. As a result, a predetermined processing (substrate processing) is performed to the substrate S in accordance with the gas supplied into each region.