Atomic layer deposition tool and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Ting Ko, Wen-Ju Chen, Wan-Chen Hsieh, Ming-Fa Wu, Tai-Chun Huang, Yung-Cheng Lu, Chi On Chui
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Ting Ko, Wen-Ju Chen, Wan-Chen Hsieh, Ming-Fa Wu, Tai-Chun Huang, Yung-Cheng Lu, Chi On Chui
Estimating the term…
In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.
An apparatus, comprising:
A deposition system comprising:
An atomic layer deposition (ALD) system comprising:
Dependencies are inferred from the claim text.