Composition for etching and method for manufacturing semiconductor device using same

A semiconductor element comprising:

• a cell gate structure formed on a substrate on which a plurality of interlayer insulating layers and a plurality of gate electrode layers are alternatively stacked, wherein the cell gate structure formed by selectively etching a plurality of nitride layers by a composition for the selective etching,
• wherein the composition for etching comprises:
• a first inorganic acid,
• a first additive, being any one selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof,
• a second additive comprising a silane inorganic acid salt produced by reaction between a second inorganic acid and a silane compound;
• and
• a solvent,
• wherein:
• the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, and a combination thereof;
• and
• the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination,
• the silane inorganic acid salt is represented by Chemical Formula C230-1,
• wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 20% by weight, and the solvent as the balance,
• (In Chemical Formula 10 and Chemical Formula 20, each R1 to R10 is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R1 to R4 is hydrogen, or an alkoxy group having 1 to 10 carbon atoms, and n is one of integer numbers from 1 to 10,)
• (In Chemical Formula C230-1, each R111 to R112 is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, each R113 to R114 is independently hydrogen, n4 is one of integer numbers from 0 to 2, l1 is one of integer numbers from 0 to 10, m1 is 0 or 1).