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US 11,529,794 B2Granted
Heteroepitaxial structure and method for forming the same, and nanogap electrode
AssigneeJapan Science and Technology Agency
InventorsYutaka Majima, YoonYoung Choi, Ikuko Shimada, Ryo Toyama, Mingyue Yang
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Abstract
A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.
Claims9
A heteroepitaxial structure, comprising:
- a first metal portion having a polycrystalline structure;
- a second metal portion on the first metal portion;
- the second metal portion has a mountain shape or a hemispherical shape;
- the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion;
- and
- the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.
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A nanogap electrode, comprising:
- a first electrode and a second electrode each including a first metal portion and a second metal portion on the first metal portion, the first metal portion having a polycrystalline structure,
- wherein the first metal portion has a linear pattern having a width of 20 nm or less,
- the second metal portion is disposed at least on one end of the linear pattern of the first metal portion and has a mountain shape or a hemispherical shape,
- a heteroepitaxial interface is formed corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and
- a distance between the second metal portions on the first electrode and on the second electrode is 5 nm or less.
2 more elements
Dependencies are inferred from the claim text.