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US 11,527,381 B2Granted
Ion implanter and model generation method
AssigneeSumitomo Heavy Industries Ion Technology Co., Ltd.
InventorsKazuhisa Ishibashi, Tetsuya Kudo, Mikio Yamaguchi
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Abstract
There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.
Claims11
An ion implanter comprising:
- a beam generation device that generates an ion beam, based on an implantation recipe;
- a plurality of measurement devices that measure a beam current of the ion beam;
- and
- a control device that acquires a plurality of data sets, each of the plurality of data sets including a plurality of measurement values measured by the plurality of measurement devices, wherein the control device evaluates measurement validity of the beam current of the ion beam by using a model representing a correlation between the plurality of measurement values, wherein
- the control device builds the model from the plurality of data sets acquired during the plurality of implantation processes based on an implantation recipe which satisfies a predetermined condition,
- the control device acquires at least one implantation parameter set in the implantation recipe, as a parameter included in the data set,
- the at least one implantation parameter comprises at least one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle, and an average dose, and
- the model represents a correlation between the plurality of measurement values and the at least one implantation parameter.
5 more elements
An implantation method comprising:
- acquiring a data set including a plurality of measurement values indicating a beam current of an ion beam generated based on an implantation recipe from a plurality of measurement devices that measure the ion beam;
- building a model representing a correlation between the plurality of measurement values from a plurality of the data sets acquired during a plurality of implantation processes based on the implantation recipe, and
- performing ion implantation based on the model, wherein
- the building of the model comprises specifying a function representing the correlation between the plurality of measurement values of the plurality of the data sets, defining a region of a graph of a function as a reference region, and setting a threshold value based on the reference region.
1 more element
An ion implanter comprising:
- a beam generation device that generates an ion beam, based on an implantation recipe;
- a plurality of measurement devices that measure a beam current of the ion beam;
- and
- a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the beam current of the ion beam by using a model representing a correlation between the plurality of measurement values, wherein
- the model comprises a function representing the correlation between the plurality of measurement values, and a region of a graph of a function defined as a reference region, and a threshold value based on the region for evaluating the measurement validity, and
- the control device evaluates the measurement validity by using the reference region.
3 more elements
An ion implanter comprising:
- a beam generation device that generates an ion beam, based on an implantation recipe;
- a plurality of measurement devices that measure a beam current of the ion beam;
- and
- a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the beam current of the ion beam by using a model representing a correlation between the plurality of measurement values, wherein
- the control device accumulates a plurality of the data sets acquired during a plurality of implantation processes based on the implantation recipes different from each other, and builds the model from the plurality of accumulated data sets.
2 more elements
Dependencies are inferred from the claim text.