II-II-VI alloy quantum dot, preparation method therefor and application thereof
AssigneeNajing Technology Corporation Limited
InventorJianhai Zhou
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Abstract
The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot.
Claims20
A preparation method of II-II-VI alloy quantum dot, wherein comprising
- step S1:
- reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster;
- step S2:
- mixing said II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot;
- step S3:
- mixing a precursor containing a second Group VI element with said first system, and heating to obtain a second system containing the II-II-VI alloy quantum dot with a II-VI shell.
A II-II-VI alloy quantum dot, wherein a full width at half maximum of said II-II-VI alloy quantum dot is between 14 and 22 nm, and said II-II-VI alloy quantum dot is CdZnSe alloy quantum dot;
- said II-II-VI alloy quantum dot has a II-VI shell.
Dependencies are inferred from the claim text.