Photonic crystal, display panel, light conversion device and glasses
AssigneesBeijing Boe Display Technology Co., Ltd., Beijing BOE Technology Development Co., Ltd.
InventorsWeipin Hu, Yinglong Huang, Jun Wu
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Abstract
A photonic crystal, a light conversion device, a display panel, and a pair of glasses are provided. The photonic crystal of the embodiment of the present disclosure includes first dielectric layers and second dielectric layers having different refractive indexes, and the first dielectric layers and the second dielectric layers are alternately stacked. A thickness and a refractive index of each of the first dielectric layers and a thickness and a refractive index of each of the second dielectric layers are configured such that the photonic crystal blocks blue light with a wavelength of 420 nm to 470 nm incident into the photonic crystal from passing through the photonic crystal.
Claims13
A photonic crystal, comprising first dielectric layers and second dielectric layers having different refractive indexes, the first dielectric layers and the second dielectric layers being alternately stacked,
- wherein a thickness and a refractive index of each of the first dielectric layers and a thickness and a refractive index of each of the second dielectric layers are configured such that the photonic crystal blocks blue light with a wavelength of 420 nm to 470 nm incident into the photonic crystal from passing through the photonic crystal,
- wherein the refractive index of each of the first dielectric layers is n1, the thickness of each of the first dielectric layers is h1, the refractive index of each of the second dielectric layers is n2, the thickness of each of the second dielectric layers is h2, n1*h1=n2*h2=λ0/4, and λ0 is in a range of 440 nm to 455 nm, the ratio of the refractive index of each of the first dielectric layers to the refractive index of each of the second dielectric layers is in a range of 1.25 to 1.35,
- a material of the first dielectric layers comprises silicon nitride, and a material of the second dielectric layers comprises silicon oxide,
- the thickness of each of the first dielectric layers is in a range of 55 nm to 60 nm, and the thickness of each of the second dielectric layers is in a range of 75 nm to 85 nm.
A light conversion device, comprising:
- a light conversion layer and a photonic crystal, and the photonic crystal being disposed at a light emit side of the light conversion layer;
- wherein the photonic crystal comprises first dielectric layers and second dielectric layers having different refractive indexes, the first dielectric layers and the second dielectric layers are alternately stacked, a thickness and a refractive index of each of the first dielectric layers and a thickness and a refractive index of each of the second dielectric layers are configured such that the photonic crystal blocks blue light with a wavelength of 420 nm to 470 nm incident into the photonic crystal from passing through the photonic crystal;
- the light conversion layer is configured to transmit a portion of first color incident light and to make another portion of the first color incident light pass through the light conversion layer to emit light of at least one other color, and a wavelength of the first color incident light is smaller than a wavelength of the light of at least one other color,
- wherein the refractive index of each of the first dielectric layers is n1, the thickness of each of the first dielectric layers is h1, the refractive index of each of the second dielectric layers is n2, the thickness of each of the second dielectric layers is h2, n1*h1=n2*h2=λ0/4, and λ0 is in a range of 440 nm to 455 nm, the ratio of the refractive index of each of the first dielectric layers to the refractive index of each of the second dielectric layers is in a range of 1.25 to 1.35,
- a material of the first dielectric layers comprises silicon nitride, and a material of the second dielectric layers comprises silicon oxide,
- the thickness of each of the first dielectric layers is in a range of 55 nm to 60 nm, and the thickness of each of the second dielectric layers is in a range of 75 nm to 85 nm.
A photonic crystal, comprising first dielectric layers and second dielectric layers having different refractive indexes, the first dielectric layers and the second dielectric layers being alternately stacked,
- wherein a thickness and a refractive index of each of the first dielectric layers and a thickness and a refractive index of each of the second dielectric layers are configured such that the photonic crystal blocks blue light with a wavelength of 420 nm to 470 nm incident into the photonic crystal from passing through the photonic crystal;
- the refractive index of each of the first dielectric layers is n1, the thickness of each of the first dielectric layers is h1, the refractive index of each of the second dielectric layers is n2, the thickness of each of the second dielectric layers is h2, n1*h1=n2*h2=λ0/4, and λ0 is in a range of 440 nm to 455 nm;
- the refractive index of each of the first dielectric layers is in a range of 1.8 to 2.0, the refractive index of each of the second dielectric layers is in a range of 1.3 to 1.5, the thickness of each of the first dielectric layers is in a range of 55 nm to 60 nm, and the thickness of each of the second dielectric layers is in a range of 75 nm to 85 nm,
- the ratio of the refractive index of each of the first dielectric layers to the refractive index of each of the second dielectric layers is in a range of 1.25 to 1.35,
- a material of the first dielectric layers comprises silicon nitride, and a material of the second dielectric layers comprises silicon oxide.
Dependencies are inferred from the claim text.