Semiconductor device with nanostructures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.
Claims20
A semiconductor device, comprising:
- a photo sensing region having a first dopant;
- and
- a semiconductor substrate laterally surrounding the photo sensing region and having a second dopant that is of a different conductivity type than the first dopant;
- and
- a plurality of nanostructures embedded in the photo sensing region and having top surfaces level with a top surface of the photo sensing region.
A semiconductor device, comprising:
- a semiconductor substrate;
- a photo sensing region in the semiconductor substrate, the photo sensing region having a plurality of recesses;
- and
- a plurality of nanostructures filling up the plurality of recesses of the photo sensing region, respectively, wherein the plurality of nanostructures are made of a semiconductor material.
A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type;
- a photo sensing region in the semiconductor substrate, the photo sensing region being of a second conductivity type different than the first conductivity type;
- and
- a plurality of nanopillars inlaid in the photo sensing region, wherein the plurality of nanopillars are made of a different material than the photo sensing region.
Dependencies are inferred from the claim text.