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AssigneeSiCrystal GmbH
InventorsBernhard Ecker, Ralf Müller, Matthias Stockmeier, Michael Vogel, Arnd-Dietrich Weber
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The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.
Silicon carbide substrate for epitaxially deposited layers which is essentially monocrystalline, the silicon carbide substrate being fabricated by slicing a bulk SiC crystal, wherein the silicon carbide substrate has a thickness of at least 200 μm and not more than 1000 μm, the silicon carbide substrate comprising:
A silicon carbide wafer substrate for epitaxially deposited layers which is essentially monocrystalline, wherein the silicon carbide wafer substrate has a thickness of at least 200 μm and not more than 1000 μm, the silicon carbide wafer substrate comprising:
Dependencies are inferred from the claim text.