SOT MRAM cell and array comprising a plurality of SOT MRAM cells

A spin-orbit torque (SOT)-magnetic random access memory (MRAM) cell, comprising:

• at least one magnetic tunnel junction (MTJ) comprising a tunnel barrier layer between a pinned ferromagnetic layer and a free ferromagnetic layer;
• a SOT line, extending substantially parallel to the plane of the layers and contacting a first end of said at least one MTJ;
• at least a first source line connected to one end of the SOT line;
• at least a first bit line and a second bit line,
• wherein the SOT-MRAM cell comprises at least one MTJ, each bit line being connected to the other end of said at least one MTJ, wherein the first bit line connects said at least one MTJ via a first transistor and the second bit line connects said at least one MTJ via a second transistor, and wherein the second bit line further connects the other end of the SOT line of said at least one MTJ via a third transistor;
• or
• wherein the SOT-MRAM cell comprises two MTJs, each MTJ being directly connected to one of the first bit line and second bit line.