Plasma annealing method and device for the same
AssigneeNissan Chemical Industries, Ltd.
InventorHitoshi Furusho
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Abstract
There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A).
Claims14
A method for producing a film by changing an amorphous silicon film to a polysilicon film while ascertaining the changing thereof by Raman spectroscopy analysis, comprising steps of:
- forming the amorphous silicon film by using a film formation gas on a substrate using a CVD method;
- (A) irradiating the amorphous silicon film on the substrate with atmospheric pressure plasma at room temperature, the plasma generated under atmospheric pressure in a range of 100 Torr higher or lower than 760 Torr, to change the amorphous silicon film to a polysilicon film;
- and
- before and after plasma irradiation, monitoring the change of the amorphous silicon film to a polysilicon film using Raman spectroscopy analysis,
- wherein the step (A) is a step of generating the plasma under the atmospheric pressure by energizing high voltage electrodes of a discharge tube at a frequency of 5 kHz to 20 kHz and a voltage of 5,000 volts to 10,000 volts for an irradiation time of 20 minutes to 1 hour, and flowing gas for plasma generation through an inside of the discharge tube at a flow rate of 30 ml/sec to 100 ml/sec, the discharge tube being made of metal, and directly irradiating the amorphous silicon film on the substrate with the generated plasma,
- both the film formation gas and the gas for plasma generation are gases containing helium, and
- the step of forming the amorphous silicon film and step (A) of irradiating with atmospheric pressure plasma are carried out within a same device, wherein the device does not include an air-tight vacuum chamber.
A method for changing a crystal structure of a constituent of an amorphous silicon film while ascertaining the changing thereof by Raman spectroscopy analysis, the method comprising:
- forming the amorphous silicon film with the constituent by using a film formation gas on a substrate using a CVD method;
- (A) irradiating the constituent of the amorphous silicon film on the substrate with atmospheric pressure plasma at room temperature, the plasma generated under atmospheric pressure in a range of 100 Torr higher or lower than 760 Torr, to change the amorphous silicon film to a polysilicon film;
- and
- before and after plasma irradiation, monitoring the change of the amorphous silicon film to a polysilicon film using Raman spectroscopy analysis,
- wherein the step (A) is a step of generating the plasma under the atmospheric pressure by energizing high voltage electrodes of a discharge tube at a frequency of 5 kHz to 20 kHz and a voltage of 5,000 volts to 10,000 volts for an irradiation time of 20 minutes to 1 hour, and flowing gas for plasma generation through an inside of the discharge tube at a flow rate of 30 ml/sec to 100 ml/sec, the discharge tube being made of metal, and directly irradiating the constituent of the amorphous silicon film on the substrate with the generated plasma,
- both the film formation gas and the gas for plasma generation are gases containing helium, and
- the step of forming the amorphous silicon film with the constituent and step (A) of irradiating with atmospheric pressure plasma are carried out within a same device, wherein the device does not include an air-tight vacuum chamber.
Dependencies are inferred from the claim text.