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US 11,501,905 B2Granted
Composition and method of making a monolithic heterostructure of multiferroic thin films
AssigneeBoston Applied Technologies, Incorporated
InventorsXiaomei Guo, Kewen Kevin Li, Yingyin Kevin Zou, Hua Jiang
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Abstract
A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.
Claims8
A monolithic multiferroic heterostructure, comprising:
- a substrate;
- a buffer layer disposed above the substrate;
- a seed layer disposed above the buffer layer;
- a ferromagnetic (FM) layer disposed above and in direct contact with the seed layer;
- a ferroelectric (FE) layer disposed above the FM layer;
- a first electrode disposed between the FM layer and the FE layer;
- and
- a second electrode disposed above the FE layer,
- wherein the substrate is composed at least in part of polycrystalline alumina, wherein the buffer layer is composed at least in part of amorphous aluminum oxide, and wherein the FM layer and the seed layer each include one or more of BaM (M-type barium hexaferrite, BaFe12O19), SrM (M-type strontium hexaferrite, SrFe12O19), scandium-substituted BaM, gallium-substituted BaM, aluminum-substituted BaM, and cesium-substituted BaM.
6 more elements
A monolithic multiferroic heterostructure, comprising:
- a substrate;
- a buffer layer disposed above the substrate;
- a seed layer disposed above the buffer laver;
- a ferromagnetic (FM) layer disposed above and in direct contact with the seed layer;
- a ferroelectric (FE) layer disposed above the FM layer;
- a first electrode disposed between the FM layer and the FE laver;
- and
- a second electrode disposed above the FE layer,
- wherein the first electrode and the second electrode are at least partially composed of platinum, gold, nickel, copper, LaNiO3 and/or SrRuO3, wherein the substrate is composed at least in part of polycrystalline alumina, wherein the buffer layer is composed at least in part of amorphous aluminum oxide, wherein the seed layer is composed at least in part of BaM (M-type barium hexaferrite;
- BaFe12O19), and wherein the FM layer is composed at least in part of BaM (M-type barium hexaferrite;
- BaFe12O19).
8 more elements
A monolithic multiferroic heterostructure, comprising:
- a substrate;
- a buffer layer disposed above the substrate;
- a seed layer disposed above the buffer layer;
- a ferromagnetic (FM) layer disposed above and in direct contact with the seed layer;
- and
- a ferroelectric (FE) layer disposed above the FM layer;
- wherein the buffer layer is composed at least in part of amorphous aluminum oxide, wherein the seed layer is composed at least in part of BaM (M-type barium hexaferrite;
- BaFe12O19), and wherein the FM layer is composed at least in part of BaM (M-type barium hexaferrite;
- BaFe12O19).
6 more elements
Dependencies are inferred from the claim text.