US 11,500,292 B2 · Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

Abstract

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, noting that in the general formula (1B), when W1 represents R1 does not represent any of

Claims25

Dependent claims

A material for forming a resist underlayer film, comprising:

(A) a compound for forming a resist underlayer film shown by the following general formula (1A);
and
(B) an organic solvent,
wherein W1 represents an organic group with a valency of n1, n1 represents an integer of 4, and X1 represents any of groups shown by the following general formulae (1B) and (1C),
wherein R1 represents any of groups shown by the following formula (1D), and two or more kinds of R1 may be used in combination;
R2 represents a hydrogen atom or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R2 may be substituted with an oxygen atom or a carbonyl group,

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/850,094Filed 16 Apr 2020

Priority

JP JP2019-7808216 Apr 2019

Published

US 2020/0333709 A122 Oct 2020

Granted

15 Nov 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification41 codes

G03F 7/094
Characterised by structural details, e.g. supports, auxiliary layers: multilayer resist systems, e.g. planarising layers
C07C 43/215
Having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring: having unsaturation outside the six-membered aromatic rings
C07C 233/75
Having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound…:…
C07C 233/80
Having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups:…

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

Life of this patent

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

Life of this patent

Abstract

Claims25