Methods of plasma dicing bulk acoustic wave components
AssigneeSkyworks Solutions, Inc.
InventorsAtsushi Takano, Takeshi Furusawa, Mitsuhiro Furukawa
Life of this patent
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Abstract
Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components
Claims20
A method of manufacturing singulated bulk acoustic wave components, the method comprising:
- forming a buffer layer over a substrate of an array of bulk acoustic wave components so as to form exposed streets between individual bulk acoustic wave components, the substrate being a silicon substrate;
- and
- plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components, the buffer layer having an etching rate that is at least 30 times slower than an etching of silicon during the plasma dicing.
A method of manufacturing singulated bulk acoustic wave components, the method comprising:
- forming a buffer layer over a substrate of an array of bulk acoustic wave components so as to form exposed streets between individual bulk acoustic wave components;
- and
- plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components, each of the singulated bulk acoustic wave components including a bulk acoustic wave resonator and a cap enclosing the bulk acoustic wave resonator, and the cap including a sidewall that includes copper and is 5 microns or less from an edge of the substrate of the respective singulated bulk acoustic wave component.
A method of manufacturing singulated bulk acoustic wave components, the method comprising:
- forming a conductor over a substrate of an array of bulk acoustic wave components, the conductor extending laterally from a via that extends through the substrate, and the conductor being electrically connected to a conductive layer in the via;
- forming a buffer layer over the substrate so as to form exposed streets between individual bulk acoustic wave components and such that the buffer layer is over at least a portion of the conductor;
- and
- plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components.
A method of manufacturing singulated bulk acoustic wave components, the method comprising:
- forming a conductor over a substrate of an array of bulk acoustic wave components, the conductor extending laterally from a via that extends through the substrate, and the conductor being electrically connected to a conductive layer in the via;
- forming solder over the conductor such that the solder is non-overlapping with the via;
- forming a buffer layer over the substrate so as to form exposed streets between individual bulk acoustic wave components;
- and
- plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components.
A method of manufacturing bulk acoustic wave components, the method comprising:
- providing a first wafer bonded with a second wafer, the first wafer having bulk acoustic resonators thereon, and the second wafer being over and spaced apart from the bulk acoustic resonators;
- forming a buffer layer on a side of the first wafer that is opposite to the bulk acoustic wave resonators such that streets are exposed;
- and
- plasma dicing through the first wafer and the second wafer along the exposed streets to form singulated bulk acoustic wave components, the buffer layer having an etching rate that is at least 30 times slower than an etching rate of silicon during the plasma dicing.
A method of manufacturing bulk acoustic wave components, the method comprising:
- forming a buffer layer over a silicon substrate of bulk acoustic wave components such that streets are exposed, the buffer including a resin;
- and
- plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components, the singulated bulk acoustic wave components each including a bulk acoustic wave resonator and a cap enclosing the bulk acoustic wave resonator, the cap including a silicon cap substrate and a sidewall that includes copper and is spaced apart from an edge of the silicon substrate of the respective singulated bulk acoustic wave component by a distance in a range from 1 micron to 5 microns.
Dependencies are inferred from the claim text.