Method for producing silicon nitride film
AssigneesTohku University, Nippon Shokubai Co., Ltd.
InventorsAkinobu Teramoto, Yoshinobu Shiba, Takashi Abe, Akira Nishimura
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Abstract
A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SinH2n, wherein n is 5, 6, or 7.
Claims20
A method for preparing a silicon nitride film comprising steps of:
- irradiating a nitride with an ultraviolet light, and
- contacting the nitride irradiated with the ultraviolet light with a cyclic hydrogenated silane represented by a general formula SinH2n, wherein n is 5, 6, or 7,
- wherein the cyclic hydrogenated silane has a cyclic structure consisting of Si atoms.
A method for preparing a silicon nitride film comprising steps of:
- irradiating a nitride with an ultraviolet light, and
- contacting the nitride irradiated with the ultraviolet light with a cyclic silane represented by a general formula SinH(2n-a)Ra, wherein n is 5, 6, or 7, a is 1 to 2n, R is an alkyl group, an aryl group, NR′2, F, Cl, Br, or I, and R′ is H, an alkyl group, or an aryl group,
- wherein the cyclic silane has a cyclic structure consisting of Si atoms.
Dependencies are inferred from the claim text.