Module substrate and semiconductor module including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSunki Yun, Kwangkyu Bang, Jihong Kim, Eunji Yu, Kyungjae Kim, Yusuf Cinar
Life of this patent
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Abstract
A module substrate for a semiconductor module including a wiring substrate having an upper surface and a lower surface opposite to each other and including a wiring formed therein, the wiring substrate having at least one through groove in at least one sidewall and extending in a thickness direction, and a through-groove test terminal including at least one contact pad, a surface of the contact pad being exposed from an inner wall of the through-groove, the contact pad being spaced apart from a vertical plane extending from the sidewall of the wiring substrate may be provided.
Claims20
A module substrate for a semiconductor module, comprising:
- a wiring substrate having an upper surface and a lower surface opposite to each other and including a wiring formed therein, the wiring substrate having at least one through groove in at least one sidewall and extending in a thickness direction;
- and
- a through-groove test terminal including at least one contact pad, a surface of the contact pad being exposed from an inner wall of the through groove,
- wherein the contact pad is spaced apart from a vertical plane extending from the sidewall of the wiring substrate.
A module substrate for a semiconductor module, comprising:
- a wiring substrate including first to fifth insulation layers and first to fourth conductive patterns between the first to fifth insulation layers, the wiring substrate having at least one through groove, the through groove in at least one sidewall of the wiring substrate and extending in a stacking direction of the first to fifth insulation layers;
- and
- a through-groove test terminal including first to fourth contact pads, the first to fourth contact pads electrically connected to the first to fourth conductive patterns, respectively, surfaces of the first to fourth contact pads being exposed from an inner wall of the through groove,
- wherein the first to fourth contact pads are spaced apart from a vertical plane extending from the sidewall of the wiring substrate, and
- wherein a first distance between both end portions of the inner wall of the through groove that are in contact with the sidewall of the wiring substrate is within a range of 200 μm to 800 μm, and a second distance between each of the first to fourth contact pads and the vertical plane is within a range of 80 μm to 320 μm.
A semiconductor module, comprising:
- a wiring substrate including a plurality of insulation layers and conductive patterns on the insulation layers, respectively, the wiring substrate having at least one through groove in at least one sidewall and extending in a stacking direction of the insulation layers;
- a semiconductor device on an upper surface or a lower surface of the wiring substrate;
- and
- a through-groove test terminal electrically connected to the conducive patterns for electrically inspecting the semiconductor device, the through-groove test terminal including a plurality of contact pads, surfaces of the contact pads being exposed from an inner wall of the through groove,
- wherein the exposed surfaces of the contact pads are arranged along the inner wall of the through groove and are spaced apart from a vertical plane extending from the sidewall of the wiring substrate.
Dependencies are inferred from the claim text.