US 11,489,108 B2 · BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

Abstract

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

Claims27

Dependent claims

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device, comprising:

a substrate;
a seed layer over the substrate, the seed layer comprising:
a silicide layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof;
and
a surface control layer comprising a material selected from a group consisting of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, and combinations thereof, wherein M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si;
and
a bismuth antimony (BiSb) layer on the seed layer, the BiSb layer having a (012) orientation.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/861,118Filed 28 Apr 2020

Published

US 2021/0336127 A128 Oct 2021

Granted

1 Nov 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10N 52/80
Hall-effect devices: constructional details
G11B 5/3133
Disposition of layers: including layers not usually being a part of the electromagnetic transducer structure and providing additional features,…
G11B 5/3909
Details related to the use of magnetic thin film layers or to their effects: arrangements using a magnetic tunnel junction
H01F 10/30
Characterised by the substrate or intermediate layers: characterised by the composition of the intermediate layers , e.g. seed, buffer, template,…

BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

Life of this patent

BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

Life of this patent

Abstract

Claims27