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US 11,489,001 B2Granted
Solid-state imaging device, drive method thereof and electronic apparatus
AssigneeSony Corporation
InventorsTaiichiro Watanabe, Akihiro Yamada, Hideo Kido, Hiromasa Saito, Keiji Mabuchi, Yuko Ohgishi
Life of this patent
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Abstract
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.
Claims20
A light detecting device, comprising:
- a photoelectric converter;
- a transfer transistor electrically connected to the photoelectric converter;
- and
- a floating diffusion electrically connected to the transfer transistor,
- wherein the transfer transistor is disposed on a first surface of a substrate which is opposite to a second surface of the substrate, the second surface being a light incident surface of the substrate,
- wherein the transfer transistor comprises a planar gate electrode disposed on the first surface of the substrate and first and second vertical gate electrodes disposed in the substrate, and
- wherein the first and second vertical gate electrodes are formed at a right angle with respect to each other and the planar gate electrode is provided between the first and second vertical gate electrodes at a corner region of the substrate.
4 more elements
An electronic apparatus, comprising:
- an optical lens system;
- a light detecting device including:
- a photoelectric converter;
- a transfer transistor electrically connected to the photoelectric converter;
- and
- a floating diffusion electrically connected to the transfer transistor,
- wherein the transfer transistor is disposed on a first surface of a substrate which is opposite to a second surface of the substrate, the second surface being a light incident surface of the substrate,
- wherein the transfer transistor comprises a planar gate electrode disposed on the first surface of the substrate and first and second vertical gate electrodes disposed in the substrate, and
- wherein the first and second vertical gate electrodes are formed at a right angle with respect to each other and the planar gate electrode is provided between the first and second vertical gate electrodes at a corner region of the substrate;
- and
- a signal processing device which processes output signals from the light detecting device.
8 more elements
A light detecting device, comprising:
- a photoelectric converter;
- a transfer transistor electrically connected to the photoelectric converter;
- and
- a floating diffusion electrically connected to the transfer transistor,
- wherein the transfer transistor is disposed on a first surface of a substrate which is opposite to a second surface of the substrate, the second surface being a light incident surface of the substrate,
- wherein the transfer transistor comprises a planar gate electrode disposed on the first surface of the substrate and first and second vertical gate electrodes disposed in the substrate,
- wherein the first and second vertical gate electrodes are formed at a right angle with respect to each other and the planar gate electrode is provided between the first and second vertical gate electrodes at a corner region of the substrate and
- wherein the floating diffusion is provided either unobstructed between the first surface of the substrate and the second surface of the substrate or between the first surface of the substrate and the photoelectric converter.
5 more elements
Dependencies are inferred from the claim text.